Damage to III–V devices during electron cyclotron resonance chemical vapor deposition

Preparation of Bismuth Titanate Films by Electron Cyclotron Resonance Plasma Sputtering-Chemical Vapor Deposition

Bismuth titanate (Bi,Ti,O,, :BIT) thin films were prepared on the Pt courted MgO(100) substrate by electron cyclotron resonance plasma sputtering-chemical vapor deposition (ECR plasma sputtering-CVD). Bi20, was used as a sputtering target and tetra-isopropoxy-titanium [Ti(i-C3H70)4] as a CVD source. The composition of films was controlled by changing RF power (P,,) of Bi,O, target and Ti source...

Field emission characteristics of multiwalled carbon nanotubes grown at low temperatures using electron cyclotron resonance chemical vapor deposition

Vertically aligned multiwalled carbon nanotubes were synthesized by electron cyclotron resonance chemical vapor deposition on Ni-coated glass substrates at temperatures as low as 400 °C. Negative self-biases were induced to the substrates by radio frequency plasma to give ion bombardment to the growing surface. An increase of self-bias voltages from 250 to 2200 V resulted in an evolution of the...

Forming B1-xCx Semiconductor Devices By Chemical Vapor Deposition

Advanced Silicon-based Materials and Devices Using Chemical Vapor Deposition

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Electron Cyclotron Resonance Ion Source